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 TPA711 700-mW MONO LOW-VOLTAGE AUDIO POWER AMPLIFIER
SLOS230B - NOVEMBER 1998 - REVISED MARCH 2000
D D D
D
Fully Specified for 3.3-V and 5-V Operation Wide Power Supply Compatibility 2.5 V - 5.5 V Output Power - 700 mW at VDD = 5 V, BTL, RL = 8 - 85 mW at VDD = 5 V, SE, RL = 32 - 250 mW at VDD = 3.3 V, BTL, RL = 8 - 37 mW at VDD = 3.3 V, SE, RL = 32 Shutdown Control - IDD = 7 A at 3.3 V - IDD = 50 A at 5 V
D D D D
BTL to SE Mode Control Integrated Depop Circuitry Thermal and Short-Circuit Protection Surface-Mount Packaging - SOIC - PowerPADTM MSOP
D OR DGN PACKAGE (TOP VIEW)
description
SHUTDOWN BYPASS SE/BTL IN
1 2 3 4
8 7 6 5
The TPA711 is a bridge-tied load (BTL) or single-ended (SE) audio power amplifier developed especially for low-voltage applicationswhere internal speakers and external earphone operation are required. Operating with a 3.3-V supply, the TPA711 can deliver 250-mW of continuous power into a BTL 8- load at less than 0.6% THD+N throughout voice band frequencies. Although this device is characterized out to 20 kHz, its operation was optimized for narrower band applications such as wireless communications. The BTL configuration eliminates the need for external coupling capacitors on the output in most applications, which is particularly important for small battery-powered equipment. A unique feature of the TPA711 is that it allows the amplifier to switch from BTL to SE on the fly when an earphone drive is required. This eliminates complicated mechanical switching or auxiliary devices just to drive the external load. This device features a shutdown mode for power-sensitive applications with special depop circuitry to eliminate speaker noise when exiting shutdown mode. The TPA711 is available in an 8-pin SOIC and the surface-mount PowerPAD MSOP package, which reduces board space by 50% and height by 40%.
VO - GND VDD VO +
VDD 6 RF Audio Input RI CI 2 CB BYPASS 4 IN VDD/2 VO+ 5 CS - +
VDD
- + From System Control From HP Jack 1 3 SHUTDOWN SE/BTL Bias Control
VO- 8 7 GND
700 mW
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PowerPAD is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
Copyright (c) 2000, Texas Instruments Incorporated
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1
TPA711 700-mW MONO LOW-VOLTAGE AUDIO POWER AMPLIFIER
SLOS230B - NOVEMBER 1998 - REVISED MARCH 2000
AVAILABLE OPTIONS PACKAGED DEVICES TA SMALL OUTLINE (D) MSOP (DGN) MSOP SYMBOLIZATION
- 40C to 85C TPA711D TPA711DGN ABB In the SOIC package, the maximum RMS output power is thermally limited to 350 mW; 700 mW peaks can be driven, as long as the RMS value is less than 350 mW. The D and DGN packages are available taped and reeled. To order a taped and reeled part, add the suffix R to the part number (e.g., TPA311DR).
Terminal Functions
TERMINAL NAME BYPASS GND IN SE/BTL SHUTDOWN VDD VO+ VO- NO. 2 7 4 3 1 6 5 8 O O I I I I/O I DESCRIPTION BYPASS is the tap to the voltage divider for internal mid-supply bias. This terminal should be connected to a 0.1-F to 2.2-F capacitor when used as an audio amplifier. GND is the ground connection. IN is the audio input terminal. When SE/BTL is held low, the TPA711 is in BTL mode. When SE/BTL is held high, the TPA711 is in SE mode. SHUTDOWN places the entire device in shutdown mode when held high (IDD = 7 A). VDD is the supply voltage terminal. VO+ is the positive output for BTL and SE modes. VO- is the negative output in BTL mode and a high-impedance output in SE mode.
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Supply voltage, VDD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 V Input voltage, VI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 V to VDD +0.3 V Continuous total power dissipation . . . . . . . . . . . . . . . . . . . . . internally limited (see Dissipation Rating Table) Operating free-air temperature range, TA (see Table 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 40C to 85C Operating junction temperature range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 40C to 150C Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65C to 150C Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260C
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. DISSIPATION RATING TABLE PACKAGE D TA 25C 725 mW DERATING FACTOR 5.8 mW/C TA = 70C 464 mW TA = 85C 377 mW
DGN 2.14 W 17.1 mW/C 1.37 W 1.11 W Please see the Texas Instruments document, PowerPAD Thermally Enhanced Package Application Report (literature number SLMA002), for more information on the PowerPAD package. The thermal data was measured on a PCB layout based on the information in the section entitled Texas Instruments Recommended Board for PowerPAD on page 33 of the before mentioned document.
recommended operating conditions
MIN Supply voltage, VDD 2.5 Operating free-air temperature, TA (see Table 3) - 40 MAX 5.5 85 UNIT V C
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2
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TPA711 700-mW MONO LOW-VOLTAGE AUDIO POWER AMPLIFIER
SLOS230B - NOVEMBER 1998 - REVISED MARCH 2000
electrical characteristics at specified free-air temperature, VDD = 3.3 V, TA = 25C (unless otherwise noted)
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VOO Output offset voltage (measured differentially) Power supply rejection ratio See Note 1 20 mV dB PSRR IDD VDD = 3 2 V to 3 4 V 3.2 3.4 BTL mode SE mode BTL mode 85 83 SE modeAAA Supply current (see Figure 6) 1.25 0.65 7 2.5 50 1.25 mA A IDD(SD) Supply current, shutdown mode (see Figure 7) NOTE 1: At 3 V < VDD < 5 V the dc output voltage is approximately VDD/2.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
operating characteristics, VDD = 3.3 V, TA = 25C, RL = 8
PARAMETER THD = 0.2%, BTL mode, SE mode,
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See Figure 14 RL = 32 , 250 PO Output power, see Note 2 THD = 0.1%, See Figure 22 37 mW THD + N BOM B1 Total harmonic distortion plus noise Maximum output power bandwidth Unity-gain bandwidth PO = 250 mW, Gain = 2, Open Loop, f = 1 kHz, See Figure 5 f = 1 kHz, See Figure 3 Gain = 1, f = 200 Hz to 4 kHz, THD = 2%, CB = 1 F, CB = 1 F, See Figure 36 See Figure 12 See Figure 12 BTL mode, SE mode, 0.55% 20 kHz 1.4 79 70 17 MHz Supply ripple rejection ratio dB Vn Noise output voltage CB = 0.1 F, See Figure 42 V(rms) NOTE 2: Output power is measured at the output terminals of the device at f = 1 kHz.
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TEST CONDITIONS
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TYP
MAX
UNIT
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3
TPA711 700-mW MONO LOW-VOLTAGE AUDIO POWER AMPLIFIER
SLOS230B - NOVEMBER 1998 - REVISED MARCH 2000
electrical characteristics at specified free-air temperature, VDD = 5 V, TA = 25C (unless otherwise noted)
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VOO Output offset voltage (measured differentially) Power supply rejection ratio 20 mV dB PSRR IDD VDD = 4 9 V to 5.1 V 4.9 51 BTL mode SE mode BTL mode SE mode 78 76AAA 2.5 1.25 100 Supply current (see Figure 6) 1.25 0.65 50 mA A IDD(SD) Supply current, shutdown mode (see Figure 7)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
operating characteristics, VDD = 5 V, TA = 25C, RL = 8
PARAMETER THD = 0.3%, BTL mode, SE mode,
TEST CONDITIONS
MIN
See Figure 18 RL = 32 ,
TYP 700
MAX
UNIT mW
PO
Output power, see Note 2
THD = 0.1%, See Figure 26
85
THD + N BOM B1
Total harmonic distortion plus noise Unity-gain bandwidth
PO = 700 mW, Gain = 2,
f = 200 Hz to 4 kHz, THD = 2%, CB = 1 F, CB = 1 F,
See Figure 16 See Figure 16 BTL mode, SE mode,
0.5% 20
Maximum output power bandwidth
kHz
Open Loop,
See Figure 37
1.4 80 73
MHz
Supply ripple rejection ratio
f = 1 kHz, See Figure 5 f = 1 kHz, See Figure 4
dB
Vn Noise output voltage Gain = 1, CB = 0.1 F, See Figure 43 17 V(rms) The DGN package, properly mounted, can conduct 700 mW RMS power continuously. The D package, can only conduct 350 mW RMS power continuously, with peaks to 700 mW. NOTE 2: Output power is measured at the output terminals of the device at f = 1 kHz.
4
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TPA711 700-mW MONO LOW-VOLTAGE AUDIO POWER AMPLIFIER
SLOS230B - NOVEMBER 1998 - REVISED MARCH 2000
PARAMETER MEASUREMENT INFORMATION
VDD 6 RF Audio Input RI CI 2 CB BYPASS 4 IN - + VDD/2 VO+ 5 CS
VDD
RL = 8
- + 1 3 SHUTDOWN SE/BTL Bias Control
VO- 8 7 GND
Figure 1. BTL Mode Test Circuit
VDD 6 RF Audio Input RI CI 2 CB BYPASS 4 IN VDD/2 VO+ 5 CS
VDD
- +
CO RL = 32
- + 1 VDD 3 SHUTDOWN SE/BTL Bias Control
VO- 8 7 GND
Figure 2. SE Mode Test Circuit
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TPA711 700-mW MONO LOW-VOLTAGE AUDIO POWER AMPLIFIER
SLOS230B - NOVEMBER 1998 - REVISED MARCH 2000
TYPICAL CHARACTERISTICS
Table of Graphs
FIGURE Supply ripple rejection ratio IDD PO Supply current Output power vs Frequency vs Supply voltage vs Supply voltage vs Load resistance vs Frequency THD + N Total harmonic distortion plus noise vs Output power Open loop gain and phase Closed loop gain and phase Vn PD Output noise voltage Power dissipation vs Frequency vs Frequency vs Frequency vs Output power 3, 4, 5 6, 7 8, 9 10, 11 12, 13, 16, 17, 20, 21, 24, 25, 28, 29, 32, 33 14, 15, 18, 19, 22, 23, 26, 27, 30, 31, 34, 35 36, 37 38, 39, 40, 41 42, 43 44, 45, 46, 47
SUPPLY RIPPLE REJECTION RATIO vs FREQUENCY
0 Supply Ripple Rejection Ratio - dB -10 -20 -30 -40 -50 -60 -70 -80 -90 -100 20 100 1k f - Frequency - Hz 10k 20k BYPASS = 1/2 VDD CB = 1 F CB = 0.1 F VDD = 3.3 V RL = 8 SE 0 Supply Ripple Rejection Ratio - dB -10 -20 -30 -40 -50 -60 -70 -80 -90 -100 20
SUPPLY RIPPLE REJECTION RATIO vs FREQUENCY
VDD = 5 V RL = 8 SE CB = 0.1 F
CB = 1 F
BYPASS = 1/2 VDD
100
1k f - Frequency - Hz
10k
20k
Figure 3
Figure 4
6
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TPA711 700-mW MONO LOW-VOLTAGE AUDIO POWER AMPLIFIER
SLOS230B - NOVEMBER 1998 - REVISED MARCH 2000
TYPICAL CHARACTERISTICS
SUPPLY RIPPLE REJECTION RATIO vs FREQUENCY
0 Supply Ripple Rejection Ratio - dB -10 -20 -30 -40 -50 -60 -70 -80 -90 -100 20 100 1k f - Frequency - Hz 10k 20k VDD = 3.3 V VDD = 5 V RL = 8 CB = 1 F BTL I DD - Supply Current - mA 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 2.5
SUPPLY CURRENT vs SUPPLY VOLTAGE
BTL
SE
3
3.5
4
4.5
5
5.5
VDD - Supply Voltage - V
Figure 5
SUPPLY CURRENT vs SUPPLY VOLTAGE
90 SHUTDOWN = High 80 70 I DD - Supply Current - A 60 50 40 30 20 10 0 2.5
Figure 6
3
3.5
4
4.5
5
5.5
VDD - Supply Voltage - V
Figure 7
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TPA711 700-mW MONO LOW-VOLTAGE AUDIO POWER AMPLIFIER
SLOS230B - NOVEMBER 1998 - REVISED MARCH 2000
TYPICAL CHARACTERISTICS
OUTPUT POWER vs SUPPLY VOLTAGE
1000 THD+N 1% f = 1 kHz BTL 800 PO - Output Power - mW PO - Output Power - mW 250 200 RL = 8 150 350 THD+N = 1% f = 1 kHz SE
OUTPUT POWER vs SUPPLY VOLTAGE
300
600 RL = 8 400 RL = 32 200
100
RL = 32
50 0 2.5 0 2.5
3
3.5
4
4.5
5
5.5
3
3.5
4
4.5
5
5.5
VDD - Supply Voltage - V
VDD - Supply Voltage - V
Figure 8
OUTPUT POWER vs LOAD RESISTANCE
800 700 PO - Output Power - mW 600 VDD = 5 V 500 400 300 200 100 0 8 16 24 32 40 48 56 64 RL - Load Resistance - VDD = 3.3 V THD+N = 1% f = 1 kHz BTL PO - Output Power - mW 350
Figure 9
OUTPUT POWER vs LOAD RESISTANCE
THD+N = 1% f = 1 kHz SE
300 250 200 VDD = 5 V 150
100
50 VDD = 3.3 V 0 8 14 20 26 32 38 44 50 56 62 RL - Load Resistance -
Figure 10
Figure 11
8
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TPA711 700-mW MONO LOW-VOLTAGE AUDIO POWER AMPLIFIER
SLOS230B - NOVEMBER 1998 - REVISED MARCH 2000
TYPICAL CHARACTERISTICS
TOTAL HARMONIC DISTORTION PLUS NOISE vs FREQUENCY
10 THD+N -Total Harmonic Distortion + Noise - % THD+N -Total Harmonic Distortion + Noise - % VDD = 3.3 V PO = 250 mW RL = 8 BTL AV =- 20 V/V 1 AV = -10 V/V
TOTAL HARMONIC DISTORTION PLUS NOISE vs FREQUENCY
10 VDD = 3.3 V RL = 8 AV = -2 V/V BTL 1 PO = 50 mW
0.1
AV = -2 V/V
0.1
PO = 125 mW
0.01 20
PO = 250 mW 0.01 20 100 1k f - Frequency - Hz 10k 20k
100
1k f - Frequency - Hz
10k
20k
Figure 12
TOTAL HARMONIC DISTORTION PLUS NOISE vs OUTPUT POWER
10 THD+N -Total Harmonic Distortion + Noise - % THD+N -Total Harmonic Distortion + Noise - % VDD = 3.3 V f = 1 kHz AV = -2 V/V BTL 1
Figure 13
TOTAL HARMONIC DISTORTION PLUS NOISE vs OUTPUT POWER
10
f = 20 kHz 1 f = 10 kHz
RL = 8 0.1
f = 1 kHz
0.1 f = 20 Hz VDD = 3.3 V RL = 8 CB = 1 F AV = -2 V/V BTL 0.1 PO - Output Power - W 1
0.01 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 PO - Output Power - W
0.01 0.01
Figure 14
Figure 15
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TPA711 700-mW MONO LOW-VOLTAGE AUDIO POWER AMPLIFIER
SLOS230B - NOVEMBER 1998 - REVISED MARCH 2000
TYPICAL CHARACTERISTICS
TOTAL HARMONIC DISTORTION PLUS NOISE vs FREQUENCY
10 THD+N -Total Harmonic Distortion + Noise - % THD+N -Total Harmonic Distortion + Noise - % VDD = 5 V PO = 700 mW RL = 8 BTL 1
TOTAL HARMONIC DISTORTION PLUS NOISE vs FREQUENCY
10 VDD = 5 V RL = 8 AV = -2 V/V BTL 1
AV = -20 V/V
PO = 50 mW
AV = -10 V/V 0.1 AV = -2 V/V
0.1
PO = 700 mW PO = 350 mW
0.01 20
100
1k f - Frequency - Hz
10k
20k
0.01 20
100
1k f - Frequency - Hz
10k
20k
Figure 16
TOTAL HARMONIC DISTORTION PLUS NOISE vs OUTPUT POWER
10 THD+N -Total Harmonic Distortion + Noise - % VDD = 5 V f = 1 kHz AV = -2 V/V BTL 1 THD+N -Total Harmonic Distortion + Noise - %
Figure 17
TOTAL HARMONIC DISTORTION PLUS NOISE vs OUTPUT POWER
10
f = 20 kHz 1 f = 10 kHz
RL = 8 0.1
f = 1 kHz 0.1 f = 20 Hz VDD = 5 V RL = 8 CB = 1 F AV = -2 V/V BTL 0.1 PO - Output Power - W 1
0.01 0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
0.01 0.01
PO - Output Power - W
Figure 18
Figure 19
10
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TPA711 700-mW MONO LOW-VOLTAGE AUDIO POWER AMPLIFIER
SLOS230B - NOVEMBER 1998 - REVISED MARCH 2000
TYPICAL CHARACTERISTICS
TOTAL HARMONIC DISTORTION PLUS NOISE vs FREQUENCY
10 THD+N -Total Harmonic Distortion + Noise - % VDD = 3.3 V PO = 30 mW RL = 32 SE 1 AV = -10 V/V THD+N -Total Harmonic Distortion + Noise - %
TOTAL HARMONIC DISTORTION PLUS NOISE vs FREQUENCY
10 VDD = 3.3 V RL = 32 AV = -1 V/V SE
1
0.1
0.1
PO = 10 mW
0.01
AV = -1 V/V AV = -5 V/V
0.01 PO = 15 mW PO = 30 mW 0.001 20 100 1k f - Frequency - Hz 10k 20k
0.001 20
100
1k f - Frequency - Hz
10k
20k
Figure 20
TOTAL HARMONIC DISTORTION PLUS NOISE vs OUTPUT POWER
10 THD+N -Total Harmonic Distortion + Noise - % VDD = 3.3 V f = 1 kHz RL = 32 AV = -1 V/V SE 1 THD+N -Total Harmonic Distortion + Noise - %
Figure 21
TOTAL HARMONIC DISTORTION PLUS NOISE vs OUTPUT POWER
10 VDD = 3.3 V RL = 32 AV = -1 V/V SE 1 f = 20 kHz
f = 10 kHz 0.1 f = 20 Hz
0.1
f = 1 kHz 0.01 0.002
0.01 0.02
0.025
0.03
0.035
0.04
0.045
0.05
0.01 PO - Output Power - W
0.1
PO - Output Power - W
Figure 22
Figure 23
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TPA711 700-mW MONO LOW-VOLTAGE AUDIO POWER AMPLIFIER
SLOS230B - NOVEMBER 1998 - REVISED MARCH 2000
TYPICAL CHARACTERISTICS
TOTAL HARMONIC DISTORTION PLUS NOISE vs FREQUENCY
10 THD+N -Total Harmonic Distortion + Noise - % VDD = 5 V PO = 60 mW RL = 32 SE 1 AV = -5 V/V THD+N -Total Harmonic Distortion + Noise - %
TOTAL HARMONIC DISTORTION PLUS NOISE vs FREQUENCY
10 VDD = 5 V RL = 32 AV = -1 V/V SE PO = 15 mW
AV = -10 V/V
1
0.1
0.1
PO = 30 mW
0.01
AV = -1 V/V
0.01 PO = 60 mW 0.001 20
0.001 20
100
1k f - Frequency - Hz
10k
20k
100
1k f - Frequency - Hz
10k
20k
Figure 24
TOTAL HARMONIC DISTORTION PLUS NOISE vs OUTPUT POWER
10 THD+N -Total Harmonic Distortion + Noise - % VDD = 5 V f = 1 kHz RL = 32 AV = -1 V/V SE 1 THD+N -Total Harmonic Distortion + Noise - %
Figure 25
TOTAL HARMONIC DISTORTION PLUS NOISE vs OUTPUT POWER
10 VDD = 5 V RL = 32 AV = -1 V/V SE 1 f = 20 kHz
f = 10 kHz 0.1 f = 20 Hz f = 1 kHz 0.01 0.002
0.1
0.01 0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.01 PO - Output Power - W
0.1
0.2
PO - Output Power - W
Figure 26
Figure 27
12
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SLOS230B - NOVEMBER 1998 - REVISED MARCH 2000
TYPICAL CHARACTERISTICS
TOTAL HARMONIC DISTORTION PLUS NOISE vs FREQUENCY
1 THD+N -Total Harmonic Distortion + Noise - % THD+N -Total Harmonic Distortion + Noise - % VDD = 3.3 V PO = 0.1 mW RL = 10 k SE 0.1 AV = -5 V/V
TOTAL HARMONIC DISTORTION PLUS NOISE vs FREQUENCY
1 VDD = 3.3 V RL = 10 k CB = 1 F AV = -1 V/V SE 0.1 PO = 0.13 mW
PO = 0.05 mW 0.01
0.01 AV = -2 V/V AV = -1 V/V 0.001 20
100
1k f - Frequency - Hz
10k
20k
0.001 20
PO = 0.1 mW 100 1k f - Frequency - Hz 10 k 20 k
Figure 28
TOTAL HARMONIC DISTORTION PLUS NOISE vs OUTPUT POWER
10 THD+N -Total Harmonic Distortion + Noise - % VDD = 3.3 V f = 1 kHz RL = 10 k AV = -1 V/V SE THD+N -Total Harmonic Distortion + Noise - %
Figure 29
TOTAL HARMONIC DISTORTION PLUS NOISE vs OUTPUT POWER
10 VDD = 3.3 V RL = 10 k AV = -1 V/V SE 1
1
0.1
f = 20 Hz 0.1 f = 20 kHz
0.01
0.01 f = 10 kHz f = 1 kHz 0.001 5 10 100 PO - Output Power - W 500
0.001 50
75
100
125
150
175
200
PO - Output Power - W
Figure 30
Figure 31
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TPA711 700-mW MONO LOW-VOLTAGE AUDIO POWER AMPLIFIER
SLOS230B - NOVEMBER 1998 - REVISED MARCH 2000
TYPICAL CHARACTERISTICS
TOTAL HARMONIC DISTORTION PLUS NOISE vs FREQUENCY
1 THD+N -Total Harmonic Distortion + Noise - % THD+N -Total Harmonic Distortion + Noise - % VDD = 5 V PO = 0.3 mW RL = 10 k SE 0.1
TOTAL HARMONIC DISTORTION PLUS NOISE vs FREQUENCY
1 VDD = 5 V RL = 10 k AV = -1 V/V SE 0.1 PO = 0.3 mW PO = 0.2 mW 0.01
AV = -5 V/V 0.01 AV = -2 V/V
PO = 0.1 mW 0.001 20
0.001 20
AV = -1 V/V 100 1k f - Frequency - Hz 10k 20k
100
1k f - Frequency - Hz
10k
20k
Figure 32
TOTAL HARMONIC DISTORTION PLUS NOISE vs OUTPUT POWER
10 THD+N -Total Harmonic Distortion + Noise - % VDD = 5 V f = 1 kHz RL = 10 k AV = -1 V/V SE THD+N -Total Harmonic Distortion + Noise - %
Figure 33
TOTAL HARMONIC DISTORTION PLUS NOISE vs OUTPUT POWER
10 VDD = 5 V RL = 10 k AV = -1 V/V SE 1
1
0.1
f = 20 Hz 0.1 f = 20 kHz
0.01
0.01
f = 10 kHz 0.001 5 10 100 PO - Output Power - W
f = 1 kHz 500
0.001 50 100
150 200 250
300
350 400
450
500
PO - Output Power - W
Figure 34
Figure 35
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TYPICAL CHARACTERISTICS
OPEN-LOOP GAIN AND PHASE vs FREQUENCY
80 70 60 Open-Loop Gain - dB 50 40 30 Gain 20 10 0 -100 -10 -20 -30 1 101 102 f - Frequency - kHz 103 104 -140 -180 - 20 -60 60 Phase Phase 20 Phase VDD = 3.3 V RL = Open BTL 180 140 100
Figure 36
OPEN-LOOP GAIN AND PHASE vs FREQUENCY
80 70 60 Phase Open-Loop Gain - dB 50 40 30 20 10 0 -100 -10 -20 -30 1 101 102 f - Frequency - kHz 104 -140 -180 Gain 60 20 - 20 -60 VDD = 5 V RL = Open BTL 180 140 100
103
Figure 37
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TYPICAL CHARACTERISTICS
CLOSED-LOOP GAIN AND PHASE vs FREQUENCY
1 0.75 0.5 Closed-Loop Gain - dB 0.25 0 -0.25 -0.5 -0.75 -1 -1.25 -1.5 -1.75 -2 101 VDD = 3.3 V RL = 8 PO = 250 mW BTL 102 103 104 105 106 140 Gain 150 Phase Phase 160 Phase 170 180
130
120
f - Frequency - Hz
Figure 38
CLOSED-LOOP GAIN AND PHASE vs FREQUENCY
1 Phase 0.75 0.5 Closed-Loop Gain - dB 0.25 0 -0.25 -0.5 -0.75 -1 -1.25 -1.5 -1.75 -2 101 VDD = 5 V RL = 8 PO = 700 m W BTL 102 103 104 105 140 Gain 150 160 170 180
130
120 106
f - Frequency - Hz
Figure 39
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TYPICAL CHARACTERISTICS
CLOSED-LOOP GAIN AND PHASE vs FREQUENCY
7 Phase 6 Gain Closed-Loop Gain - dB 5 4 150 140 2 1 0 -1 -2 101 102 VDD = 3.3 V RL = 32 AV = 2 V/V PO = 30 mW SE 130 120 110 100 Phase Phase 3 170 160 180
103
104
105
106
f - Frequency - Hz
Figure 40
CLOSED-LOOP GAIN AND PHASE vs FREQUENCY
7 Phase 6 Gain 5 Closed-Loop Gain - dB 4 150 3 140 2 130 1 0 -1 -2 101 102 VDD = 5 V RL = 32 AV = 2 V/V PO = 60 mW SE 103 104 105 106 120 110 100 170 160 180
f - Frequency - Hz
Figure 41
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TYPICAL CHARACTERISTICS
OUTPUT NOISE VOLTAGE vs FREQUENCY
100 VDD = 3.3 V BW = 22 Hz to 22 kHz RL = 8 or 32 AV = 1 100 Vn - Output Noise Voltage - V (rms) VDD = 5 V BW = 22 Hz to 22 kHz RL = 8 or 32 AV = 1 VO BTL
OUTPUT NOISE VOLTAGE vs FREQUENCY
Vn - Output Noise Voltage - V (rms)
VO BTL
10
VO+
10
VO+
1 20
100
1k f - Frequency - Hz
10 k
20 k
1 20
100
1k f - Frequency - Hz
10 k
20 k
Figure 42
POWER DISSIPATION vs OUTPUT POWER
350 RL = 8 PD - Power Dissipation - mW 100 90 80 70 60 50 40 30 20 10 600 0 0
Figure 43
POWER DISSIPATION vs OUTPUT POWER
300 PD - Power Dissipation - mW 250 200 150 RL = 32
RL = 8
100
RL = 32 VDD = 3.3 V SE 50 100 150
50 0 0 200 400
VDD = 3.3 V BTL
PD - Output Power - mW
PD - Output Power - W
Figure 44
Figure 45
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TYPICAL CHARACTERISTICS
POWER DISSIPATION vs OUTPUT POWER
800 700 PD - Power Dissipation - mW 600 500 400 300 200 100 0 0 200 400 600 800 1000 PD - Output Power - mW RL = 32 VDD = 5 V BTL RL = 8 PD - Power Dissipation - mW 200 180 160 140 120 100 80 60 40 20 0 0 50 100 150 200 250 300 PD - Output Power - mW VDD = 5 V SE RL = 32 RL = 8
POWER DISSIPATION vs OUTPUT POWER
Figure 46
Figure 47
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APPLICATION INFORMATION bridged-tied load versus single-ended mode
Figure 48 shows a linear audio power amplifier (APA) in a BTL configuration. The TPA711 BTL amplifier consists of two linear amplifiers driving both ends of the load. There are several potential benefits to this differential drive configuration but initially consider power to the load. The differential drive to the speaker means that as one side is slewing up, the other side is slewing down, and vice versa. This in effect doubles the voltage swing on the load as compared to a ground referenced load. Plugging 2 x VO(PP) into the power equation, where voltage is squared, yields 4x the output power from the same supply rail and load impedance (see equation 1). V
+ (rms) +
V
O(PP) 22 (1) 2 (rms) R L
VDD
V
Power
VO(PP)
RL VDD
2x VO(PP)
-VO(PP)
Figure 48. Bridge-Tied Load Configuration In a typical portable handheld equipment sound channel operating at 3.3 V, bridging raises the power into an 8- speaker from a singled-ended (SE, ground reference) limit of 62.5 mW to 250 mW. In sound power that is a 6-dB improvement, which is loudness that can be heard. In addition to increased power there are frequency response concerns. Consider the single-supply SE configuration shown in Figure 49. A coupling capacitor is required to block the dc offset voltage from reaching the load. These capacitors can be quite large (approximately 33 F to 1000 F) so they tend to be expensive, heavy, occupy valuable PCB area, and have the additional drawback of limiting low-frequency performance of the system. This frequency limiting effect is due to the high pass filter network created with the speaker impedance and the coupling capacitance and is calculated with equation 2. fc
+ 2 pR1 C
(2)
LC
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APPLICATION INFORMATION bridged-tied load versus single-ended mode (continued)
For example, a 68-F capacitor with an 8- speaker would attenuate low frequencies below 293 Hz. The BTL configuration cancels the dc offsets, which eliminates the need for the blocking capacitors. Low-frequency performance is then limited only by the input network and speaker response. Cost and PCB space are also minimized by eliminating the bulky coupling capacitor.
VDD -3 dB
VO(PP)
CC RL
VO(PP)
fc
Figure 49. Single-Ended Configuration and Frequency Response Increasing power to the load does carry a penalty of increased internal power dissipation. The increased dissipation is understandable considering that the BTL configuration produces 4x the output power of the SE configuration. Internal dissipation versus output power is discussed further in the thermal considerations section.
BTL amplifier efficiency
Linear amplifiers are notoriously inefficient. The primary cause of these inefficiencies is voltage drop across the output stage transistors. There are two components of the internal voltage drop. One is the headroom or dc voltage drop that varies inversely to output power. The second component is due to the sinewave nature of the output. The total voltage drop can be calculated by subtracting the RMS value of the output voltage from VDD. The internal voltage drop multiplied by the RMS value of the supply current, IDDrms, determines the internal power dissipation of the amplifier. An easy-to-use equation to calculate efficiency starts out being equal to the ratio of power from the power supply to the power delivered to the load. To accurately calculate the RMS values of power in the load and in the amplifier, the current and voltage waveform shapes must first be understood (see Figure 50).
VO IDD
V(LRMS)
IDD(RMS)
Figure 50. Voltage and Current Waveforms for BTL Amplifiers
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APPLICATION INFORMATION BTL amplifier efficiency (continued)
Although the voltages and currents for SE and BTL are sinusoidal in the load, currents from the supply are very different between SE and BTL configurations. In an SE application the current waveform is a half-wave rectified shape, whereas in BTL it is a full-wave rectified waveform. This means RMS conversion factors are different. Keep in mind that for most of the waveform, both the push and pull transistors are not on at the same time, which supports the fact that each amplifier in the BTL device only draws current from the supply for half the waveform. The following equations are the basis for calculating amplifier efficiency. Efficiency Where:
+ P PL
(3) 2 L
SUP
V rms 2 L P L R L V P V rms L 2
+
+ 2R
Vp
+
+ VDD IDDrms + VDDR2VP SUP pL 2V P I rms + DD pR
P L Efficiency of a BTL Configuration
+ 2V
p VP
DD
+
p
PR LL 2 2V DD
12
(4)
Table 1 employs equation 4 to calculate efficiencies for three different output power levels. The efficiency of the amplifier is quite low for lower power levels and rises sharply as power to the load is increased, resulting in a nearly flat internal power dissipation over the normal operating range. The internal dissipation at full output power is less than in the half power range. Calculating the efficiency for a specific system is the key to proper power supply design. Table 1. Efficiency Vs Output Power in 3.3-V 8- BTL Systems
OUTPUT POWER (W) 0.125 0.25 EFFICIENCY (%) 33.6 47.6 PEAK-to-PEAK VOLTAGE (V) 1.41 2.00 2.45 INTERNAL DISSIPATION (W) 0.26 0.29 0.28
0.375 58.3 High-peak voltage values cause the THD to increase.
A final point to remember about linear amplifiers (either SE or BTL) is how to manipulate the terms in the efficiency equation to utmost advantage when possible. In equation 4, VDD is in the denominator. This indicates that as VDD goes down, efficiency goes up.
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APPLICATION INFORMATION application schematic
Figure 51 is a schematic diagram of a typical handheld audio application circuit, configured for a gain of -10 V/V.
CF 5 pF Audio Input
RF 50 k VDD/2 RI 10 k CI 0.47 F CB 2.2 F 4 IN - BYPASS +
VDD 6 CS 1 F
VDD CC 330 F
VO+ 5
2
1 k
- + From System Control 0.1 F VDD 100 k 1 3 100 k SHUTDOWN SE/BTL Bias Control
VO- 8 7 GND
Figure 51. TPA711 Application Circuit The following sections discuss the selection of the components used in Figure 51.
component selection
gain setting resistors, RF and RI The gain for each audio input of the TPA711 is set by resistors RF and RI according to equation 5 for BTL mode. BTL Gain
+ *2
R
F R I
(5)
BTL mode operation brings about the factor 2 in the gain equation due to the inverting amplifier mirroring the voltage swing across the load. Given that the TPA711 is a MOS amplifier, the input impedance is very high; consequently input leakage currents are not generally a concern, although noise in the circuit increases as the value of RF increases. In addition, a certain range of RF values is required for proper start-up operation of the amplifier. Taken together it is recommended that the effective impedance seen by the inverting node of the amplifier be set between 5 k and 20 k. The effective impedance is calculated in equation 6. Effective Impedance I + RRFRR ) F (6) I
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APPLICATION INFORMATION component selection (continued)
As an example consider an input resistance of 10 k and a feedback resistor of 50 k. The BTL gain of the amplifier would be -10 V/V and the effective impedance at the inverting terminal would be 8.3 k, which is well within the recommended range. For high performance applications, metal film resistors are recommended because they tend to have lower noise levels than carbon resistors. For values of RF above 50 k, the amplifier tends to become unstable due to a pole formed from RF and the inherent input capacitance of the MOS input structure. For this reason, a small compensation capacitor of approximately 5 pF should be placed in parallel with RF when RF is greater than 50 k. This, in effect, creates a low pass filter network with the cutoff frequency defined in equation 7.
-3 dB
f
c(lowpass)
+ 2 pR1 C
FF
(7)
fc
For example, if RF is 100 k and CF is 5 pF, then fc is 318 kHz, which is well outside of the audio range. input capacitor, CI In the typical application an input capacitor, CI, is required to allow the amplifier to bias the input signal to the proper dc level for optimum operation. In this case, CI and RI form a high-pass filter with the corner frequency determined in equation 8.
-3 dB
f
c(highpass)
1 + 2 pR C
II
(8)
fc
The value of CI is important to consider as it directly affects the bass (low frequency) performance of the circuit. Consider the example where RI is 10 k and the specification calls for a flat bass response down to 40 Hz. Equation 8 is reconfigured as equation 9. C I 1 + 2 pR fc I (9)
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APPLICATION INFORMATION component selection (continued)
In this example, CI is 0.40 F, so one would likely choose a value in the range of 0.47 F to 1 F. A further consideration for this capacitor is the leakage path from the input source through the input network (RI, CI) and the feedback resistor (RF) to the load. This leakage current creates a dc offset voltage at the input to the amplifier that reduces useful headroom, especially in high gain applications. For this reason a low-leakage tantalum or ceramic capacitor is the best choice. When polarized capacitors are used, the positive side of the capacitor should face the amplifier input in most applications, as the dc level there is held at VDD/2, which is likely higher than the source dc level. It is important to confirm the capacitor polarity in the application. power supply decoupling, CS The TPA711 is a high-performance CMOS audio amplifier that requires adequate power supply decoupling to ensure the output total harmonic distortion (THD) is as low as possible. Power supply decoupling also prevents oscillations for long lead lengths between the amplifier and the speaker. The optimum decoupling is achieved by using two capacitors of different types that target different types of noise on the power supply leads. For higher frequency transients, spikes, or digital hash on the line, a good low equivalent-series-resistance (ESR) ceramic capacitor, typically 0.1 F placed as close as possible to the device VDD lead, works best. For filtering lower-frequency noise signals, a larger aluminum electrolytic capacitor of 10 F or greater placed near the audio power amplifier is recommended. midrail bypass capacitor, CB The midrail bypass capacitor, CB, is the most critical capacitor and serves several important functions. During start-up or recovery from shutdown mode, CB determines the rate at which the amplifier starts up. The second function is to reduce noise produced by the power supply caused by coupling into the output drive signal. This noise is from the midrail generation circuit internal to the amplifier, which appears as degraded PSRR THD + N. The capacitor is fed from a 250-k source inside the amplifier. To keep the start-up pop as low as possible, the relationship shown in equation 10 should be maintained. This insures the input capacitor is fully charged before the bypass capacitor is fuly charged and the amplifier starts up. 10 C B 250 k
v
R
) RI F
1
C
(10) I
As an example, consider a circuit where CB is 2.2 F, CI is 0.47 F, RF is 50 k, and RI is 10 k. Inserting these values into the equation 10 we get: 18.2
v 35.5
which satisfies the rule. Bypass capacitor, CB, values of 0.1 F to 2.2 F ceramic or tantalum low-ESR capacitors are recommended for the best THD and noise performance.
single-ended operation
In SE mode (see Figure 51), the load is driven from the primary amplifier output (VO+, terminal 5). In SE mode the gain is set by the RF and RI resistors and is shown in equation 11. Since the inverting amplifier is not used to mirror the voltage swing on the load, the factor of 2, from equation 5, is not included. SE Gain
+*
R
F R I
(11)
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APPLICATION INFORMATION component selection (continued)
The output coupling capacitor required in single-supply SE mode also places additional constraints on the selection of other components in the amplifier circuit. The rules described earlier still hold with the addition of the following relationship:
10 C 250 k
v
B
R
) RI F
1
C
1 RC
I
LC
(12)
output coupling capacitor, CC
In the typical single-supply SE configuration, an output coupling capacitor (CC) is required to block the dc bias at the output of the amplifier, thus preventing dc currents in the load. As with the input coupling capacitor, the output coupling capacitor and impedance of the load form a high-pass filter governed by equation 13.
-3 dB
f
c(high)
+ 2 pR1 C
LC
(13)
fc
The main disadvantage, from a performance standpoint, is the load impedances are typically small, which drives the low-frequency corner higher, degrading the bass response. Large values of CC are required to pass low frequencies into the load. Consider the example where a CC of 330 F is chosen and loads vary from 4 , 8 , 32 , and 47 k. Table 2 summarizes the frequency response characteristics of each configuration. Table 2. Common Load Impedances Vs Low Frequency Output Characteristics in SE Mode
RL 8 32 47,000 CC 330 F 330 F 330 F LOWEST FREQUENCY 60 Hz 15 Hz 0.01 Hz
As Table 2 indicates, an 8- load is adequate, earphone response is good, and drive into line level inputs (a home stereo for example) is exceptional.
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APPLICATION INFORMATION SE/BTL operation
The ability of the TPA711 to easily switch between BTL and SE modes is one of its most important cost-saving features. This feature eliminates the requirement for an additional earphone amplifier in applications where internal speakers are driven in BTL mode but external earphone or speaker must be accommodated. Internal to the TPA711, two separate amplifiers drive VO+ and VO-. The SE/BTL input (terminal 3) controls the operation of the follower amplifier that drives VO- (terminal 8). When SE/BTL is held low, the amplifier is on and the TPA711 is in the BTL mode. When SE/BTL is held high, the VO- amplifier is in a high output impedance state, which configures the TPA711 as an SE driver from VO+ (terminal 5). IDD is reduced by approximately one-half in SE mode. Control of the SE/BTL input can be from a logic-level TTL source or, more typically, from a resistor divider network as shown in Figure 52.
4
IN
- +
VO+ 5
CC
2
BYPASS
1 k
- + 1 3 0.1 F VDD 100 k 100 k SHUTDOWN SE/BTL Bias Control
VO- 8 7 GND
Figure 52. TPA711 Resistor Divider Network Circuit Using a readily available 1/8-in. (3.5 mm) mono earphone jack, the control switch is closed when no plug is inserted. When closed, the 100-k/1-k divider pulls the SE/BTL input low. When a plug is inserted, the 1-k resistor is disconnected and the SE/BTL input is pulled high. When the input goes high, the VO- amplifier is shut down causing the BTL speaker to mute (virtually open-circuits the speaker). The VO+ amplifier then drives through the output capacitor (CC ) into the earphone jack.
using low-ESR capacitors
Low-ESR capacitors are recommended throughout this applications section. A real (as opposed to ideal) capacitor can be modeled simply as a resistor in series with an ideal capacitor. The voltage drop across this resistor minimizes the beneficial effects of the capacitor in the circuit. The lower the equivalent value of this resistance the more the real capacitor behaves like an ideal capacitor.
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APPLICATION INFORMATION 5-V versus 3.3-V operation
The TPA711 operates over a supply range of 2.5 V to 5.5 V. This data sheet provides full specifications for 5-V and 3.3-V operation, as these are considered to be the two most common standard voltages. There are no special considerations for 3.3-V versus 5-V operation with respect to supply bypassing, gain setting, or stability. The most important consideration is that of output power. Each amplifier in TPA711 can produce a maximum voltage swing of VDD - 1 V. This means, for 3.3-V operation, clipping starts to occur when VO(PP) = 2.3 V as opposed to VO(PP) = 4 V at 5 V. The reduced voltage swing subsequently reduces maximum output power into an 8- load before distortion becomes significant. Operation from 3.3-V supplies, as can be shown from the efficiency formula in equation 4, consumes approximately two-thirds the supply power of operation from 5-V supplies for a given output-power level.
headroom and thermal considerations
Linear power amplifiers dissipate a significant amount of heat in the package under normal operating conditions. A typical music CD requires 12 dB to 15 dB of dynamic headroom to pass the loudest portions without distortion as compared with the average power output. From the TPA711 data sheet, one can see that when the TPA711 is operating from a 5-V supply into a 8- speaker that 700 mW peaks are available. Converting watts to dB: P
+ 10 Log dB
P P
W
ref
+ 10Log
700 mW 1W
+ -1.5 dB
Subtracting the headroom restriction to obtain the average listening level without distortion yields: -1.5 dB - 15 dB = -16.5 (15 dB headroom) -1.5 dB - 12 dB = -13.5 (12 dB headroom) -1.5 dB - 9 dB = -10.5 (9 dB headroom) -1.5 dB - 6 dB = -7.5 (6 dB headroom) -1.5 dB - 3 dB = -4.5 (3 dB headroom) Converting dB back into watts: P W
+ 10PdB 10 Pref + 22 mW (15 dB headroom) + 44 mW (12 dB headroom) + 88 mW (9 dB headroom) + 175 mW (6 dB headroom) + 350 mW (3 dB headroom)
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APPLICATION INFORMATION headroom and thermal considerations (continued)
This is valuable information to consider when attempting to estimate the heat dissipation requirements for the amplifier system. Comparing the absolute worst case, which is 700 mW of continuous power output with 0 dB of headroom, against 12 dB and 15 dB applications drastically affects maximum ambient temperature ratings for the system. Using the power dissipation curves for a 5-V, 8- system, the internal dissipation in the TPA711 and maximum ambient temperatures is shown in Table 3. Table 3. TPA711 Power Rating, 5-V, 8-, BTL
PEAK OUTPUT POWER (mW) 700 700 700 700 700 AVERAGE OUTPUT POWER 700 mW 350 mW (3 dB) 176 mW (6 dB) 88 mW (9 dB) 44 mW (12 dB) POWER DISSIPATION (mW) 675 595 475 350 225 D PACKAGE (SOIC) MAXIMUM AMBIENT TEMPERATURE 34C 47C 68C 89C 111C DGN PACKAGE (MSOP) MAXIMUM AMBIENT TEMPERATURE 110C 115C 122C 125C 125C
Table 3 shows that the TPA711 can be used to its full 700-mW rating without any heat sinking in still air up to 110C and 34C for the DGN package (MSOP) and D pacakge (SOIC) respectively.
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MECHANICAL DATA
D (R-PDSO-G**)
14 PINS SHOWN
PLASTIC SMALL-OUTLINE PACKAGE
0.050 (1,27) 0.020 (0,51) 0.014 (0,35) 14 8 0.008 (0,20) NOM 0.244 (6,20) 0.228 (5,80) 0.157 (4,00) 0.150 (3,81) 0.010 (0,25) M
Gage Plane
0.010 (0,25) 1 A 7 0- 8 0.044 (1,12) 0.016 (0,40)
Seating Plane 0.069 (1,75) MAX 0.010 (0,25) 0.004 (0,10) 0.004 (0,10)
PINS ** DIM A MAX
8 0.197 (5,00) 0.189 (4,80)
14 0.344 (8,75) 0.337 (8,55)
16 0.394 (10,00) 0.386 (9,80) 4040047 / D 10/96
A MIN
NOTES: A. B. C. D.
All linear dimensions are in inches (millimeters). This drawing is subject to change without notice. Body dimensions do not include mold flash or protrusion, not to exceed 0.006 (0,15). Falls within JEDEC MS-012
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MECHANICAL DATA
DGN (S-PDSO-G8) PowerPADTM PLASTIC SMALL-OUTLINE PACKAGE
0,65 8 5
0,38 0,25
0,25 M
Thermal Pad (See Note D)
0,15 NOM 3,05 2,95 4,98 4,78
Gage Plane 0,25 1 3,05 2,95 4 0- 6 0,69 0,41
Seating Plane 1,07 MAX 0,15 0,05 0,10
4073271/A 04/98 NOTES: A. B. C. D. All linear dimensions are in millimeters. This drawing is subject to change without notice. Body dimensions include mold flash or protrusions. The package thermal performance may be enhanced by attaching an external heat sink to the thermal pad. This pad is electrically and thermally connected to the backside of the die and possibly selected leads. E. Falls within JEDEC MO-187
PowerPAD is a trademark of Texas Instruments.
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IMPORTANT NOTICE Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgment, including those pertaining to warranty, patent infringement, and limitation of liability. TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with TI's standard warranty. Testing and other quality control techniques are utilized to the extent TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except those mandated by government requirements. Customers are responsible for their applications using TI components. In order to minimize risks associated with the customer's applications, adequate design and operating safeguards must be provided by the customer to minimize inherent or procedural hazards. TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other intellectual property right of TI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. TI's publication of information regarding any third party's products or services does not constitute TI's approval, warranty or endorsement thereof.
Copyright (c) 2000, Texas Instruments Incorporated
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